IPB051NE8NGXT

IPB051NE8NGXT图片1
IPB051NE8NGXT概述

D2PAK N-CH 85V 100A

If you need to either amplify or switch between signals in your design, then Technologies" power MOSFET is for you. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

IPB051NE8NGXT中文资料参数规格
技术参数

极性 N-CH

耗散功率 300 W

漏源极电压Vds 85 V

连续漏极电流Ids 100A

上升时间 42 ns

输入电容Ciss 9090pF @40VVds

下降时间 21 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 300000 mW

封装参数

引脚数 3

封装 TO-263

外形尺寸

封装 TO-263

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买IPB051NE8NGXT
型号: IPB051NE8NGXT
制造商: Infineon 英飞凌
描述:D2PAK N-CH 85V 100A

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