IPB025N08N3GATMA1

INFINEON  IPB025N08N3GATMA1  晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 80V 120A D2PAK

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB025N08N3GATMA1, 120 A, Vds=80 V, 3引脚 D2PAK TO-263封装

e络盟:
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V

艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IPB025N08N3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3

Verical:
Trans MOSFET N-CH 80V 120A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB025N08N3GATMA1  MOSFET Transistor, N Channel, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V