IPB60R165CPATMA1

INFINEON  IPB60R165CPATMA1  功率场效应管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V

CoolMOS™CP 功率 MOSFET

欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPB60R165CPATMA1, 21 A, Vds=650 V, 3引脚 D2PAK TO-263封装

得捷:
MOSFET N-CH 600V 21A TO263-3

贸泽:
MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP

e络盟:
晶体管, MOSFET, N沟道, 21 A, 650 V, 0.15 ohm, 10 V, 3 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; IPB60R165CPATMA1 power MOSFET is for you. Its maximum power dissipation is 192000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.

安富利:
Trans MOSFET N-CH 650V 21A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO263-3

Verical:
Trans MOSFET N-CH 650V 21A 3-Pin2+Tab D2PAK T/R