MOSFET, Power; N-Ch; VDSS 100V; RDSON 5.6 Milliohms; ID 130A; D2Pak; PD 300W; VF 1.3V
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
MOSFET N-CH 100V 130A D2PAK
艾睿:
Trans MOSFET N-CH 100V 130A 3-Pin2+Tab D2PAK Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 100V; RDSON 5.6 Milliohms; ID 130A; D2Pak; PD 300W; VF 1.3V
Verical:
Trans MOSFET N-CH 100V 130A 3-Pin2+Tab D2PAK Tube
DeviceMart:
HEXFET Power MOSFET, N채널, Vd = 100, Rds = 5.6mΩ, Id = 140A, D2Pak패키지
漏源极电阻 7 mΩ
极性 N-Channel
耗散功率 300 W
产品系列 IRFS4310
输入电容 7670pF @50V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 140 A
输入电容Ciss 7670pF @50VVds
额定功率Max 300 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFS4310PBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STB120NF10T4 意法半导体 | 功能相似 | IRFS4310PBF和STB120NF10T4的区别 |