单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
Summary of Features:
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- Excellent switching performance
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- World’s lowest R DSon
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- Very low Q g and Q gd
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- Excellent gate charge x R DSon product FOM
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- RoHS compliant-halogen free
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- MSL1 rated 2
Benefits:
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- Environmentally friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy-to-design products
额定功率 300 W
极性 N-CH
耗散功率 300 W
漏源极电压Vds 150 V
漏源击穿电压 150 V
连续漏极电流Ids 100A
上升时间 35 ns
输入电容Ciss 5470pF @75VVds
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-262-3
长度 10.2 mm
宽度 4.5 mm
高度 9.45 mm
封装 TO-262-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Isolated DC-DC converters telecom and datacom systems, Synchronous rectification for AC-DC SMPS, Class D audio amplifiers, Or-ing switches and circuit breakers in 48V systems
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IPI075N15N3GXKSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
IPI075N15N3GHKSA1 英飞凌 | 类似代替 | IPI075N15N3GXKSA1和IPI075N15N3GHKSA1的区别 |
IPI075N15N3G 英飞凌 | 类似代替 | IPI075N15N3GXKSA1和IPI075N15N3G的区别 |
IPB072N15N3GATMA1 英飞凌 | 功能相似 | IPI075N15N3GXKSA1和IPB072N15N3GATMA1的区别 |