IPB65R125C7ATMA1概述
N-CH 650V 18A
Summary of Features:
-
.
-
650V voltage
-
.
-
Revolutionary best-in-class R DSon/package
-
.
-
Reduced energy stored in output capacitance Eoss
-
.
-
Lower gate charge Qg
-
.
-
Space saving through use of smaller packages or reduction of parts
-
.
-
12 years manufacturing experience in superjunction technology
Benefits:
-
.
-
Improved safety margin and suitable for both SMPS and solar inverter applications
-
.
-
Lowest conduction losses/package
-
.
-
Low switching losses
-
.
-
Better light load efficiency
-
.
-
Increasing power density
-
.
-
Outstanding CoolMOS™ quality
Target Applications:
-
.
-
Telecom
-
.
-
Server
-
.
-
Solar
-
.
-
PC power
IPB65R125C7ATMA1中文资料参数规格 技术参数
额定功率 101 W
极性 N-CH
耗散功率 101 W
漏源极电压Vds 650 V
连续漏极电流Ids 18A
上升时间 15 ns
输入电容Ciss 1670pF @400VVds
下降时间 8 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 101W Tc
封装参数
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
其他
产品生命周期 Active
包装方式 Tape & Reel TR
在线购买IPB65R125C7ATMA1 型号: IPB65R125C7ATMA1
描述:N-CH 650V 18A