IPB65R125C7ATMA1

IPB65R125C7ATMA1图片1
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IPB65R125C7ATMA1概述

N-CH 650V 18A

Summary of Features:

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650V voltage
.
Revolutionary best-in-class R DSon/package
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Reduced energy stored in output capacitance Eoss
.
Lower gate charge Qg
.
Space saving through use of smaller packages or reduction of parts
.
12 years manufacturing experience in superjunction technology

Benefits:

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Improved safety margin and suitable for both SMPS and solar inverter applications
.
Lowest conduction losses/package
.
Low switching losses
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Better light load efficiency
.
Increasing power density
.
Outstanding CoolMOS™ quality

Target Applications:

 

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Telecom
.
Server
.
Solar
.
PC power
IPB65R125C7ATMA1中文资料参数规格
技术参数

额定功率 101 W

极性 N-CH

耗散功率 101 W

漏源极电压Vds 650 V

连续漏极电流Ids 18A

上升时间 15 ns

输入电容Ciss 1670pF @400VVds

下降时间 8 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 101W Tc

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准

含铅标准 无铅

数据手册

在线购买IPB65R125C7ATMA1
型号: IPB65R125C7ATMA1
描述:N-CH 650V 18A

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