IPA60R099C6XKSA1

INFINEON  IPA60R099C6XKSA1  功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V

The IPA60R099C6 is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ C6 combines "s experience as the leading Superjunction MOSFET supplier with Best-in-Class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

.

Easy control of switching behaviour

.

Extremely low losses due to very low Figure of Merit RDS ON x Qg and Eoss

.

Very high commutation ruggedness

.

Easy to use

.

Better light load efficiency compared to C3

.

Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

.

Better performance in comparison to previous CoolMOS™ generations

.

More efficient, more compact, lighter and cooler

.

Improved power density

.

Improved reliability

.

Better light load efficiency

.

General purpose part can be used in both soft and hard switching topologies

.

Improved efficiency in hard switching applications

.

Reduces possible ringing due to PCB layout and package parasitic effects