INFINEON IPB036N12N3GATMA1 晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
得捷:
MOSFET N-CH 120V 180A TO263-7
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB036N12N3GATMA1, 180 A, Vds=120 V, 7引脚 D2PAK TO-263封装
立创商城:
N沟道 120V 180A
贸泽:
MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB036N12N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
TME:
Transistor: N-MOSFET; unipolar; 120V; 180A; 300W; PG-TO263-3
Verical:
Trans MOSFET N-CH 120V 180A Automotive 7-Pin6+Tab D2PAK T/R
Newark:
# INFINEON IPB036N12N3GATMA1 MOSFET Transistor, N Channel, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 120V 180A TO263-7 / N-Channel 120 V 180A Tc 300W Tc Surface Mount PG-TO263-7
额定功率 300 W
通道数 1
针脚数 7
漏源极电阻 0.0029 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 120 V
漏源击穿电压 120 V
连续漏极电流Ids 180A
上升时间 52 ns
输入电容Ciss 10400pF @60VVds
下降时间 21 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-7
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 电源管理, Portable Devices, Synchronous rectification for AC-DC SMPS, |Isolated DC-DC converters telecom and datacom systems, 发光二极管照明, Computers & Computer Peripherals, LED Lighting, 电机驱动与控制, Or-ing switches and circuit breakers in 48V systems, Motor Drive & Control, 便携式器材, 计算机和计算机周边, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17