N沟道 40V 160A
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
得捷:
HEXFET POWER MOSFET
立创商城:
N沟道 40V 160A
艾睿:
Trans MOSFET N-CH 40V 320A 7-Pin6+Tab D2PAK Tube
Allied Electronics:
MOSFET, N Ch., 40V, 320A, 1.6 MOHM, 170NC QG, D2-PAK 7-PIN, Pb-Free
Verical:
Trans MOSFET N-CH Si 40V 320A 7-Pin6+Tab D2PAK Tube
DeviceMart:
MOSFET N-CH 40V 160A D2PAK-7
极性 N-Channel
耗散功率 330 W
产品系列 IRF2804S-7P
输入电容 6930pF @25V
漏源极电压Vds 40 V
连续漏极电流Ids 320 A
上升时间 150 ns
输入电容Ciss 6930pF @25VVds
额定功率Max 330 W
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
高度 4.55 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99