INFINEON IPB60R099C6ATMA1 功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
CoolMOS™C6/C7 功率 MOSFET
得捷:
MOSFET N-CH 600V 37.9A D2PAK
立创商城:
N沟道 600V 37.9A
欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPB60R099C6ATMA1, 38 A, Vds=600 V, 3引脚 D2PAK TO-263封装
贸泽:
MOSFET HIGH POWER_LEGACY
e络盟:
晶体管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
艾睿:
Make an effective common gate amplifier using this IPB60R099C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 278000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 600V 37.9A 4-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Verical:
Trans MOSFET N-CH 600V 37.9A 3-Pin2+Tab D2PAK T/R
Newark:
MOSFET Transistor, N Channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
额定功率 278 W
通道数 1
针脚数 3
漏源极电阻 0.09 Ω
极性 N-Channel
耗散功率 278 W
阈值电压 3 V
漏源极电压Vds 650 V
连续漏极电流Ids 37.9A
上升时间 12 ns
输入电容Ciss 2660pF @100VVds
下降时间 6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 278000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 工业, 车用, Industrial, 电源管理, Power Management, Industrial, Power Management, Alternative Energy, Consumer Electronic, 通信与网络, 替代能源, 消费电子产品, Consumer Electronics
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC