IDH09G65C5XKSA1

Diode Schottky 650V 9A 2Pin TO-220 Tube

Description:

CoolSiC™ generation 5 represents ’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit Q c x V f. 

Summary of Features:

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V br at 650V

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Improved figure of merit Q c x V f

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No reverse recovery charge

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Soft switching reverse recovery waveform

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Temperature independent switching behavior

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High operating temperature T j max 175°C

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Improved surge capability

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Pb-free lead plating

Benefits:

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Higher safety margin against overvoltage and complements CoolMOS™ offer

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Improved efficiency over all load conditions

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Increased efficiency compared to Silicon Diode alternatives

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Reduced EMI compared to snappier Silicon diode reverse recovery waveform

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Highly stable switching performance

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Reduced cooling requirements

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Reduced risks of thermal runaway

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RoHS compliant

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Very high quality and high volume manufacturing capability

Target Applications:

 

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Telecom/server SMPS

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Solar

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UPS

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PC power

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LED/LCD TV

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Motor drives

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HID lighting