INFINEON IPB065N15N3GATMA1 晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB065N15N3GATMA1, 130 A, Vds=150 V, 7引脚 D2PAK TO-263封装
得捷:
MOSFET N-CH 150V 130A TO263-7
立创商城:
N沟道 150V 130A
贸泽:
MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3
e络盟:
晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB065N15N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
富昌:
Single N-Channel 150 V 6.5 mOhm 70 nC OptiMOS™ Power Mosfet - D2PAK-7
Chip1Stop:
Trans MOSFET N-CH 150V 130A 7-Pin6+Tab TO-263
TME:
Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
Verical:
Trans MOSFET N-CH 150V 130A Automotive 7-Pin6+Tab D2PAK T/R
Newark:
# INFINEON IPB065N15N3GATMA1 MOSFET Transistor, N Channel, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
额定功率 300 W
针脚数 7
漏源极电阻 0.0052 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 150 V
连续漏极电流Ids 130A
上升时间 35 ns
输入电容Ciss 5500pF @75VVds
下降时间 14 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10.31 mm
宽度 4.57 mm
高度 9.45 mm
封装 TO-263-7
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 车用, 电源管理, 通信与网络, Isolated DC-DC converters telecom, Synchronous rectification for AC-DC SMPS, 音频, C, Power Management, Motor Drive & Control, , Or-ing switches and circuit breakers in 48V systems, Power Management
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17