IRF9Z34NS

Trans MOSFET P-CH 55V 19A 3Pin2+Tab D2PAK

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Surface Mount

Low-profile through-hole IRF9Z34NL

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated