IRLR024N

Trans MOSFET N-CH 55V 17A 3Pin2+Tab DPAK

Description

Fifth Generation HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Logic-Level Gate Drive

Surface Mount

Straight Lead IRLU024N

Advanced Process Technology

Fast Switching

Fully Avalanche Rated