INFINEON IPB010N06NATMA1 晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0008 ohm, 10 V, 2.8 V
OptiMOS™5 功率 MOSFET
得捷:
MOSFET N-CH 60V 45A/180A TO263-7
欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPB010N06NATMA1, 180 A, Vds=60 V, 7引脚 D2PAK TO-263封装
立创商城:
N沟道 60V 180A 45A
e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 180 A, 800 µohm, TO-263 D2PAK, 表面安装
艾睿:
Use Infineon Technologies&s; IPB010N06NATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Verical:
Trans MOSFET N-CH 60V 180A 7-Pin6+Tab D2PAK T/R
Newark:
MOSFET Transistor, N Channel, 180 A, 60 V, 0.0008 ohm, 10 V, 2.8 V
额定功率 300 W
针脚数 7
漏源极电阻 0.0008 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 2.8 V
漏源极电压Vds 60 V
连续漏极电流Ids 180A
上升时间 36 ns
输入电容Ciss 15000pF @30VVds
下降时间 23 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10.31 mm
宽度 4.57 mm
高度 9.45 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, 替代能源, Isolated DC-DC converters, Power Management, Alternative Energy, Motor Drive & Control, Industrial, Power Management, Alternative En
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC