IPC302N20N3X1SA1

IPC302N20N3X1SA1概述

N-CH 200V

Description:

With OptiMOS™ 200V and 250V continues to deliver best-in-class on-state resistance R DSon power MOSFETs with unique performance. The leading R DSon and figure of merit FOM characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet PoE.

Summary of Features:

.
„Industry’s lowest R DSon
.
„Lowest Q g and Q gd
.
„World’s lowest FOM

Benefits:

.
Highest efficiency
.
„Highest power density
.
„Lowest board space consumption
.
„Less paralleling required
.
„System cost improvement
.
„Easy-to-design products
.
„Environmentally friendly
IPC302N20N3X1SA1中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 200 V

封装参数

封装 --

外形尺寸

封装 --

其他

产品生命周期 Active

制造应用 for 110V AC networks, „Power over ethernet PoE, „DC-DC for

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IPC302N20N3X1SA1
型号: IPC302N20N3X1SA1
描述:N-CH 200V

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