INFINEON IPB200N25N3GATMA1 晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB200N25N3GATMA1, 64 A, Vds=250 V, 3引脚 D2PAK TO-263封装
得捷:
MOSFET N-CH 250V 64A D2PAK
立创商城:
N沟道 250V 64A
贸泽:
MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3
艾睿:
This IPB200N25N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R
TME:
Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO263-3
Verical:
Trans MOSFET N-CH 250V 64A 3-Pin2+Tab D2PAK T/R
Newark:
MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
力源芯城:
250V,64A,N沟道功率MOSFET
额定功率 300 W
通道数 1
针脚数 3
漏源极电阻 0.0175 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
输入电容 5340 pF
漏源极电压Vds 250 V
漏源击穿电压 250 V
连续漏极电流Ids 64A
上升时间 20 ns
输入电容Ciss 5340pF @100VVds
下降时间 12 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10 mm
宽度 9.25 mm
高度 4.4 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 电源管理, Isolated DC-DC converters, Synchronous rectification for AC-DC SMPS, Power Management, Motor Drive & Control, Industrial, , 音频, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC