INFINEON IPW60R125CPFKSA1 功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
CoolMOS™CP 功率 MOSFET
欧时:
Infineon CoolMOS CP 系列 Si N沟道 MOSFET IPW60R125CPFKSA1, 25 A, Vds=650 V, 3引脚 TO-247封装
得捷:
MOSFET N-CH 600V 25A TO247-3
立创商城:
N沟道 600V 25A
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The IPW60R125CPFKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 208000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
TME:
Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Verical:
Trans MOSFET N-CH 650V 25A 3-Pin3+Tab TO-247 Tube
Newark:
# INFINEON IPW60R125CPFKSA1 Power MOSFET, N Channel, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
额定电压DC 600 V
额定电流 25.0 A
额定功率 208 W
针脚数 3
漏源极电阻 0.11 Ω
极性 N-Channel
耗散功率 208 W
阈值电压 3 V
输入电容 2.50 nF
栅电荷 70.0 nC
漏源极电压Vds 650 V
连续漏极电流Ids 25.0 A
上升时间 5 ns
输入电容Ciss 2500pF @100VVds
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 208 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 16.13 mm
宽度 5.21 mm
高度 21.1 mm
封装 TO-247-3
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 通信与网络, 电源管理, Lighting, 工业, 替代能源, 照明, Alternative Energy, Consumer Electronics, 消费电子产品, Communications & Networking, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17