INFINEON IPB107N20NAATMA1 晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
The IPB107N20NA is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies UPS and inverters.
额定功率 300 W
针脚数 3
漏源极电阻 0.0096 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 200 V
连续漏极电流Ids 88A
上升时间 26 ns
输入电容Ciss 5340pF @100VVds
下降时间 11 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300000 mW
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, 车用, 电源管理, 工业, Isolated DC-DC converters, Synchronous rectification for AC-DC SMPS, Audio, 发光二极管照明, LED Lighting, 电机驱动与控制, 音频, Automotive, Motor Drive & Control, Class D audio amplifiers, Power Management
RoHS标准
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17