Trans MOSFET N-CH 500V 15A 3Pin3+Tab ISOPLUS 220
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance<30pF
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
额定电压DC 500 V
额定电流 26.0 A
漏源极电阻 260 mΩ
极性 N-Channel
耗散功率 130000 mW
输入电容 3.60 nF
栅电荷 65.0 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 26.0 A
输入电容Ciss 3600pF @25VVds
额定功率Max 130 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 130W Tc
安装方式 Through Hole
封装 ISOPLUS-220
封装 ISOPLUS-220
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 End of Life
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFC26N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXTC26N50P IXYS Semiconductor | 功能相似 | IXFC26N50P和IXTC26N50P的区别 |