IRGB4055PBF

Trans IGBT Chip N-CH 300V 110A 3Pin3+Tab TO-220AB

Features

Advanced Trench IGBT Technology

Optimized for Sustain and Energy Recovery circuits in PDP applications

Low VCEonand Energy per Pulse EPULSE™ for improved panel efficiency

High repetitive peak current capability

Lead Free package

艾睿:
Trans IGBT Chip N-CH 300V 110A 3-Pin3+Tab TO-220AB

TME:
Transistor: IGBT; 300V; 110A; 255W; TO220AB