Trans MOSFET N-CH 20V 8.7A 8Pin SOIC
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Generation V Technology
• Ultra Low On-Resistance
• N-Channel Mosfet
• Surface Mount
• Available in Tape & Reel
• Dynamic dv/dt Rating
• Fast Switching
额定电压DC 20.0 V
额定电流 8.70 A
漏源极电阻 22.0 mΩ max
极性 N-Channel
耗散功率 2.5 W
产品系列 IRF7401
漏源极电压Vds 20 V
漏源击穿电压 20.0V min
连续漏极电流Ids 8.70 A
上升时间 72.0 ns
输入电容Ciss 1600pF @15VVds
额定功率Max 2.5 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF7401 International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STS6NF20V 意法半导体 | 功能相似 | IRF7401和STS6NF20V的区别 |
NDS8425 飞兆/仙童 | 功能相似 | IRF7401和NDS8425的区别 |
SI4426DY-T1-E3 威世 | 功能相似 | IRF7401和SI4426DY-T1-E3的区别 |