IXGH28N120B

Trans IGBT Chip N-CH 1200V 50A 250000mW 3Pin3+Tab TO-247AD

The IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 1200 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

艾睿:
Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin3+Tab TO-247AD

Verical:
Trans IGBT Chip N-CH 1200V 50A 250000mW 3-Pin3+Tab TO-247AD