IDW20G65C5FKSA1

INFINEON  IDW20G65C5FKSA1  二极管, 碳化硅肖特基, SIC, thinQ 5G 650V系列, 单, 650 V, 20 A, 29 nC, TO-247

The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit Qc x Vf. The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.

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Revolutionary semiconductor material-silicon carbide

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Reduced cooling requirements

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No reverse recovery/no forward recovery

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Temperature independent switching behaviour

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High surge current capability

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Increased efficiency compared to silicon diode alternatives

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Enabling higher frequency/increased power density solutions

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Higher system reliability due to lower operating temperatures

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Reduced EMI

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Reduced risks of thermal runaway