INTERNATIONAL RECTIFIER IRF130 晶体管, MOSFET, N沟道, 14 A, 100 V, 180 mohm, 10 V, 4 V
Product Summary
The HEXFETtechnology is the key to ’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features:
■ Repetitive Avalanche Ratings
■ Dynamic dv/dt Rating
■ Hermetically Sealed
■ Simple Drive Requirements
■ Ease of Paralleling
额定功率 79 W
针脚数 2
漏源极电阻 180 mΩ
极性 N-Channel
耗散功率 75 W
产品系列 IRF130
阈值电压 4 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 14.0 A
工作温度Max 150 ℃
安装方式 Through Hole
引脚数 2
封装 TO-204
封装 TO-204
产品生命周期 Unknown
RoHS标准 Non-Compliant
含铅标准 Contains Lead
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99