IXFC16N80P

IXFC16N80P概述

ISOPLUS N-CH 800V 9A

N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

Silicon chip on Direct-Copper-Bond substrate

  - High power dissipation

  - Isolated mounting surface

  - 2500V electrical isolation

Low drain to tab capacitance<35pF

Low RDS on HDMOS™ process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching UIS rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode power supplies

DC choppers

AC motor control

Advantages

Easy assembly: no screws, or isolation foils required

Space savings

High power density

Low collector capacitance to ground low EMI

IXFC16N80P中文资料参数规格
技术参数

漏源极电阻 650 mΩ

极性 N-CH

耗散功率 150W Tc

漏源极电压Vds 800 V

连续漏极电流Ids 9.00 A

输入电容Ciss 4600pF @25VVds

耗散功率Max 150W Tc

封装参数

安装方式 Through Hole

封装 ISOPLUS-220

外形尺寸

封装 ISOPLUS-220

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IXFC16N80P
型号: IXFC16N80P
制造商: IXYS Semiconductor
描述:ISOPLUS N-CH 800V 9A

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