IXFC26N50

IXFC26N50图片1
IXFC26N50概述

IXFC Series N-Ch 500 Vds 200mOhm 135NC 230W Mosfet - ISOPLUS 220

Electrically Isolated Back Surface

N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features

Silicon chip on Direct-Copper-Bond substrate

\- High power dissipation

\- Isolated mounting surface

\- 2500V electrical isolation

Low drain to tab capacitance<35pF

Low RDS onHDMOS™ process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching UIS rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode power  supplies

DC  choppers

AC motor control

IXFC26N50中文资料参数规格
技术参数

耗散功率 230W Tc

漏源极电压Vds 500 V

输入电容Ciss 4200pF @25VVds

额定功率Max 230 W

耗散功率Max 230W Tc

封装参数

安装方式 Through Hole

封装 ISOPLUS-220

外形尺寸

封装 ISOPLUS-220

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IXFC26N50
型号: IXFC26N50
制造商: IXYS Semiconductor
描述:IXFC Series N-Ch 500 Vds 200mOhm 135NC 230W Mosfet - ISOPLUS 220

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