Trans IGBT Chip N-CH 1.2kV 80A 3Pin3+Tab TO-274AA Tube
**Co-Pack IGBT over 21A, Infineon**
Isolated Gate Bipolar Transistors IGBT from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
得捷:
IRGPS40B120 - DISCRETE IGBT WITH
艾睿:
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin3+Tab TO-274AA Tube
Allied Electronics:
IRGPS40B120UDP, IGBT Transistor, 80 A 1200 V, 3-Pin TO-274AA
DeviceMart:
IGBT W/DIODE 1200V 80A SUPER247
额定电压DC 1.20 kV
额定电流 80.0 A
耗散功率 595000 mW
产品系列 IRGPS40B120UD
上升时间 39.0 ns
击穿电压集电极-发射极 1200 V
反向恢复时间 180 ns
额定功率Max 595 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 595000 mW
安装方式 Through Hole
引脚数 3
封装 Super-247-3
高度 20.3 mm
封装 Super-247-3
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC