Trans MOSFET P-CH 200V 11A 3Pin2+Tab TO-3
The is a -200V single P-channel Advanced HEXFET® MOSFET features efficient geometry and unique processing of this latest state-of-the-art design achieves, very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
漏源极电阻 500 mΩ
极性 P-Channel
耗散功率 125 W
产品系列 IRF9240
漏源极电压Vds 200 V
漏源击穿电压 -200 V
连续漏极电流Ids -11.0 A
输入电容Ciss 1200pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温Max 150 ℃
耗散功率Max 125000 mW
安装方式 Through Hole
引脚数 2
封装 TO-3
高度 7.74 mm
封装 TO-3
重量 0.01 kg
工作温度 -55℃ ~ 150℃
产品生命周期 Unknown
制造应用 Power Management, Motor Drive & Control, Audio, Defence, Military & Aerospace
RoHS标准 Non-Compliant
含铅标准 Lead Free
军工级 Yes
REACH SVHC版本 2014/12/17