INTERNATIONAL RECTIFIER IRF9130 场效应管, P通道, MOSFET, -100V, 11A, TO-204AA 新
The is a P-channel HEXFET® Power MOSFET with low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
艾睿:
Trans MOSFET P-CH 100V 11A 3-Pin2+Tab TO-3
Newark:
MOSFET Transistor, P Channel, -11 A, -100 V, 300 mohm, -10 V, -4 V
罗切斯特:
Trans MOSFET P-CH 100V 11A 3-Pin2+Tab TO-3
针脚数 2
漏源极电阻 300 mΩ
极性 P-Channel
耗散功率 75 W
产品系列 IRF9130
漏源极电压Vds 100 V
漏源击穿电压 -100 V
连续漏极电流Ids -11.0 A
输入电容Ciss 860pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
工作结温Max 150 ℃
耗散功率Max 75000 mW
安装方式 Through Hole
引脚数 2
封装 TO-204
高度 7.74 mm
封装 TO-204
重量 0.012 kg
工作温度 -55℃ ~ 150℃
产品生命周期 Unknown
制造应用 Audio, Motor Drive & Control, Power Management
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
ECCN代码 EAR99