先进的功率MOSFET Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
♦Logic-Level Gate Drive
♦Avalanche Rugged Technology
♦Rugged Gate Oxide Technology
♦Lower Input Capacitance
♦Improved Gate Charge
♦Extended Safe Operating Area
♦Lower Leakage Current: 10µA Max. @ VDS= 100V
♦Lower RDSON: 0.336ΩTyp.
贸泽:
MOSFET 200V N-Channel a-FET Logic Level
艾睿:
Trans MOSFET N-CH 200V 9A 3-Pin3+Tab TO-220AB Rail
Win Source:
Advanced Power MOSFET
额定电压DC 200 V
额定电流 9.00 A
漏源极电阻 400 mΩ
极性 N-Channel
耗散功率 69 W
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.00 A
上升时间 6 ns
输入电容Ciss 755pF @25VVds
额定功率Max 69 W
下降时间 9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 69W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99