500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
• 14A, 500V, RDSon= 0.39Ω@VGS= 10 V
• Low gate charge typical 87 nC
• Low Crss typical 60 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
通道数 1
漏源极电阻 310 mΩ
极性 N-Channel
耗散功率 205 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 14.0 A
上升时间 130 ns
输入电容Ciss 3800pF @25VVds
下降时间 125 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 205W Tc
安装方式 Through Hole
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFP450B Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | IRFP450B和STP55NF06的区别 |
STW20NK50Z 意法半导体 | 功能相似 | IRFP450B和STW20NK50Z的区别 |
STP80NF10 意法半导体 | 功能相似 | IRFP450B和STP80NF10的区别 |