Trans MOSFET N-CH 60V 130A 3Pin3+Tab TO-247AC
VDSS= 60V
RDSon= 5.5mΩ
ID= 130A
Description
Advanced HEXFET® Power MOSFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Lead-Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFP064VPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
IRFP064PBF 威世 | 功能相似 | IRFP064VPBF和IRFP064PBF的区别 |