ISL9N306AD3ST

N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET 30V ， 50A ， 6mз N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.0052Ω/Ohm @250A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-3V 耗散功率Pd Power Dissipation| 125W Description & Applications| N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • Fast switching 描述与应用| N沟道逻辑电平PWM优化UltraFET®沟槽功率MOSFET 30V，50A，6MΩ 概述 该设备采用了新的先进的沟槽MOSFET 的技术和功能，同时保持低的导通电阻低栅极电荷。 为开关应用进行了优化，该设备提高 DC/ DC转换器的整体效率，并允许以较高的开关频率的操作。 快速切换