500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.
Features
• 8.0A, 500V, RDSon = 0.8Ω @VGS = 10 V
• Low gate charge typical 41 nC
• Low Crss typical 35 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
通道数 1
漏源极电阻 650 mΩ
极性 N-Channel
耗散功率 134 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 8.00 A
上升时间 65 ns
输入电容Ciss 1800pF @25VVds
额定功率Max 134 W
下降时间 75 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 134W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRF840B Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP9NK50Z 意法半导体 | 功能相似 | IRF840B和STP9NK50Z的区别 |
STP5NK50Z 意法半导体 | 功能相似 | IRF840B和STP5NK50Z的区别 |
STP7N52K3 意法半导体 | 功能相似 | IRF840B和STP7N52K3的区别 |