MOSFET DRVR 600V 0.6A 2Out Hi/Lo Side Non-Inv 8Pin SOIC Tube
Description
The IRS2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
• 3.3 V, 5 V, and 15 V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs
• RoHS compliant
电源电压DC 20.0V max
输出接口数 2
输出电压 620 V
输出电流 290 mA
耗散功率 0.625 W
产品系列 IRS2101
上升时间 170 ns
下降时间 90 ns
下降时间Max 90 ns
上升时间Max 170 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 625 mW
电源电压 10V ~ 20V
电源电压Max 20 V
电源电压Min 10 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC