INTERNATIONAL RECTIFIER IR2112SPBF 芯片, 场效应管, MOSFET驱动器, 高/低压侧, SOIC16 新
**Features:**
* Floating Channel Designed for Bootstrap Operation
* Fully Operational to +200 V
* Gate Drive Supply Range from 10 to 20 V
* Matched Propagation Delay for Both Channels
e络盟:
The IR2112SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
艾睿:
Driver 600V 0.5A 2-OUT Hi/Lo Side Non-Inv 16-Pin SOIC W Tube
电源电压DC 10.0V min
工作电压 10V ~ 20V
输出接口数 2
输出电压 620 V
输出电流 250 mA
针脚数 16
耗散功率 1250 mW
产品系列 IR2112
上升时间 130ns Max
下降时间 65ns Max
下降时间Max 65 ns
上升时间Max 130 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1250 mW
电源电压 10V ~ 20V
电源电压Max 20 V
电源电压Min 10 V
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
长度 10.5 mm
高度 2.35 mm
封装 SOIC-16
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17