IRS2186SPBF 管装
Description
The IRS2186/IRS21864 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5V offset.
• Lower di/dt gate driver for better noise immunity
• Output source/sink current capability 4 A/4 A
电源电压DC 10.0V min
工作电压 10V ~ 20V
输出接口数 2
输出电压 620 V
耗散功率 0.625 W
产品系列 IRS2186
上升时间 38ns Max
下降时间 30ns Max
下降时间Max 30 ns
上升时间Max 38 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 625 mW
电源电压 10V ~ 20V
电源电压Max 20 V
电源电压Min 10 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17