Driver 600V 2.5A 2Out Hi/Lo Side Non-Inv 16Pin SOIC W T/R
Description
The IRS2110/IRS2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic in puts are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 V or 600 V.
Features
•Floating channel designed for bootstrap operation
•Fully operational to +500 V or +600 V
•Tolerant to negative transient voltage, dV/dt immune
•Gate drive supply range from 10 V to 20 V
•Undervoltage lockout for both channels
•3.3 V logic compatible
•Separate logic supply range from 3.3 V to 20 V
•Logic and power ground ±5V offset
•CMOS Schmitt-triggered inputs with pull-down
•Cycle by cycle edge-triggered shutdown logic
•Matched propagation delay for both channels
•Outputs in phase with inputs
电源电压DC 20.0V max
工作电压 10V ~ 20V
输出接口数 2
输出电压 ≥10.0 V
耗散功率 1250 mW
产品系列 IRS2113
上升时间 35ns Max
下降时间 25ns Max
下降时间Max 25 ns
上升时间Max 35 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 1250 mW
电源电压 10V ~ 20V
电源电压Max 20 V
电源电压Min 10 V
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
长度 10.5 mm
高度 2.35 mm
封装 SOIC-16
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free