SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44Pin TSOP-II T/R
SRAM - Asynchronous Memory IC 1Mb 64K x 16 Parallel 10ns 44-TSOP II
得捷:
IC SRAM 1MBIT PARALLEL 44TSOP II
贸泽:
SRAM 1Mb 64Kx16 10ns Async SRAM 3.3v
艾睿:
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
安富利:
SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 10ns 44-Pin TSOP-II T/R
Chip1Stop:
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
Verical:
SRAM Chip Async Single 3.3V 1M-bit 64K x 16 10ns 44-Pin TSOP-II T/R
电源电压DC 3.30 V, 3.60 V max
供电电流 120 mA
位数 16
存取时间 10 ns
内存容量 1000000 B
存取时间Max 10 ns
工作温度Max 70 ℃
工作温度Min 0 ℃
电源电压 3.135V ~ 3.6V
电源电压Max 3.63 V
电源电压Min 3.135 V
安装方式 Surface Mount
引脚数 44
封装 TSOP-44
封装 TSOP-44
工作温度 0℃ ~ 70℃
产品生命周期 Not Recommended
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IS61LV6416-10TL-TR Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS61LV6416-10T Integrated Silicon SolutionISSI | 完全替代 | IS61LV6416-10TL-TR和IS61LV6416-10T的区别 |
IS61LV6416-10TL Integrated Silicon SolutionISSI | 类似代替 | IS61LV6416-10TL-TR和IS61LV6416-10TL的区别 |
IS61LV6416-10TI Integrated Silicon SolutionISSI | 类似代替 | IS61LV6416-10TL-TR和IS61LV6416-10TI的区别 |