IS61LV25616AL-10LQLI

IS61LV25616AL-10LQLI图片1
IS61LV25616AL-10LQLI图片2
IS61LV25616AL-10LQLI概述

静态随机存取存储器 4Mb,High-Speed Low PowerAsync,10ns,3.3v

DESCRIPTION

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.

FEATURES

• High-speed access time:

   — 10, 12 ns

• CMOS low power operation

• Low stand-by power:

   — Less than 5 mA typ. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available

IS61LV25616AL-10LQLI中文资料参数规格
技术参数

位数 16

存取时间Max 10 ns

工作温度Max 85 ℃

工作温度Min -40 ℃

封装参数

安装方式 Surface Mount

引脚数 44

封装 LQFP

外形尺寸

封装 LQFP

其他

产品生命周期 Active

符合标准

RoHS标准 RoHS Compliant

海关信息

ECCN代码 3A991.b.2.a

数据手册

在线购买IS61LV25616AL-10LQLI
型号: IS61LV25616AL-10LQLI
制造商: Integrated Silicon SolutionISSI
描述:静态随机存取存储器 4Mb,High-Speed Low PowerAsync,10ns,3.3v
替代型号IS61LV25616AL-10LQLI
型号/品牌 代替类型 替代型号对比

IS61LV25616AL-10LQLI

Integrated Silicon SolutionISSI

当前型号

当前型号

IS61WV25616BLL-10TLI

Integrated Silicon SolutionISSI

完全替代

IS61LV25616AL-10LQLI和IS61WV25616BLL-10TLI的区别

IS61WV25616EDBLL-10TLI

Integrated Silicon SolutionISSI

完全替代

IS61LV25616AL-10LQLI和IS61WV25616EDBLL-10TLI的区别

IS61WV25616BLL-10TLI-TR

Integrated Silicon SolutionISSI

完全替代

IS61LV25616AL-10LQLI和IS61WV25616BLL-10TLI-TR的区别

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