DRAM Chip SDRAM 512Mbit 16Mx32 3.3V 86Pin TSOP-II
* Clock frequency: 166, 143 MHz * Fully synchronous; all signals referenced to a positive Clock edge * Internal bank for hiding row access/precharge * Power supply: Vdd/Vddq = 3.3V * LVTTL interface * Programmable burst length * 1, 2, 4, 8, full page * Programmable burst sequence: Sequential/Interleave * Auto Refresh CBR * Self Refresh * 8K refresh cycles every 64 ms * Random column address every Clock cycle * Programmable CAS latency 2, 3 Clocks * Burst read/write and burst read/single write operations capability * Burst termination by burst stop and precharge command * Packages: 90-ball TF-BGA, 86-pin TSOP-ll * Temperature Range: Commercial 0°C to +70°C Industrial -40°C to +85°C
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IS42S32160F-7TL-TR Integrated Silicon SolutionISSI | 当前型号 | 当前型号 |
IS42S32160B-7TL-TR Integrated Silicon SolutionISSI | 类似代替 | IS42S32160F-7TL-TR和IS42S32160B-7TL-TR的区别 |