TEXAS INSTRUMENTS ISO5500DW 驱动器, IGBT, MOSFET, 高压侧, 3V-5.5V电源, 2.5A输出, 200ns延迟, SOIC-16
Isolated MOSFET & IGBT Gate Drivers, Texas Instruments
### MOSFET & IGBT 驱动器,Texas Instruments
得捷:
DGTL ISO 4.243KV GATE DVR 16SOIC
立创商城:
ISO5500DW
德州仪器TI:
2.5-A, 4.2-kV RMS single channel isolated gate driver with protection features
欧时:
Texas Instruments ISO5500DW MOSFET 功率驱动器, 2.5A, 3 → 5.5 V电源, 16引脚 SOIC封装
贸泽:
Gate Drivers 2.5A Iso IGBT/MOSFET Gate Driver
e络盟:
驱动器, IGBT, MOSFET, 高压侧, 3V-5.5V电源, 2.5A输出, 200ns延迟, SOIC-16
艾睿:
Sleep easy by implementing this ISO5500DW power driver by Texas Instruments. This device has a maximum propagation delay time of 200typ ns and a maximum power dissipation of 592 mW. Its maximum power dissipation is 592 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 3|15 V and a maximum of 5.5|30 V.
安富利:
MOSFET DRVR 2.5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube
Chip1Stop:
Driver 2.5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube
Verical:
Driver 2.5A 1-OUT Inv/Non-Inv 16-Pin SOIC Tube
Newark:
DRIVER, GATE, ISOLATED, 2.5A, 16SOIC
电源电压DC 3.00V min
上升/下降时间 55ns, 10ns
输出接口数 1
输出电流 2.5 A
通道数 1
针脚数 16
耗散功率 592 mW
上升时间 55 ns
隔离电压 4243 Vrms
输出电流Max 2.5 A
下降时间 10 ns
下降时间Max 10 ns
上升时间Max 55 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 592 mW
电源电压Max 5.5 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
长度 10.5 mm
宽度 7.6 mm
高度 2.35 mm
封装 SOIC-16
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Each
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ISO5500DW TI 德州仪器 | 当前型号 | 当前型号 |
ISO5500DWR 德州仪器 | 完全替代 | ISO5500DW和ISO5500DWR的区别 |