静态随机存取存储器 8M 512Kx18 7.5ns Sync 静态随机存取存储器 3.3v
DESCRIPTION
The 9 Meg "NLF/NVF" product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, "no wait" state, device for networking and communications applications. They are organized as 256K words by 36 bits and 512K words by 18 bits, fabricated with ISSI"s advanced CMOS technology.
Incorporating a "no wait" state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit.
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119-ball PBGA, and 165- ball PBGA packages
• Power supply:
NVF: VDD 2.5V ± 5%, VDDQ 2.5V ± 5%
NLF: VDD 3.3V ± 5%, VDDQ 3.3V/2.5V ± 5%
• JTAG Boundary Scan for PBGA packages
• Industrial temperature available
• Lead-free available
