2.5 A隔离式IGBT , MOSFET栅极驱动器 2.5 A Isolated IGBT, MOSFET Gate Driver
Never worry about transistors not switching by using this power driver by Texas Instruments. This device has a maximum propagation delay time of 200typ ns and a maximum power dissipation of 592 mW. Its maximum power dissipation is 592 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 3|15 V and a maximum of 5.5|30 V.
上升/下降时间 55ns, 10ns
输出接口数 1
通道数 1
耗散功率 592 mW
隔离电压 4243 Vrms
下降时间 10 ns
下降时间Max 10 ns
上升时间Max 55 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
耗散功率Max 592 mW
电源电压Max 5.5 V
电源电压Min 3 V
安装方式 Surface Mount
引脚数 16
封装 SOIC-16
封装 SOIC-16
工作温度 -40℃ ~ 125℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
ISO5500DWR TI 德州仪器 | 当前型号 | 当前型号 |
ISO5500DW 德州仪器 | 完全替代 | ISO5500DWR和ISO5500DW的区别 |