低边 IGBT MOSFET 灌:9A 拉:9A
Change state in a high power transistor by implementing this power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXDD609CI IXYS Semiconductor | 当前型号 | 当前型号 |
IXDN609CI IXYS Semiconductor | 完全替代 | IXDD609CI和IXDN609CI的区别 |
IXDD614CI IXYS Semiconductor | 类似代替 | IXDD609CI和IXDD614CI的区别 |
IXDI609CI IXYS Semiconductor | 类似代替 | IXDD609CI和IXDI609CI的区别 |