IXDN609 系列 35 V 9 A 表面贴装 低边 Ultrafast MOSFET 驱动器 - SOIC-8
Switch on or off your high-power transistors with this power driver from Ixys Corporation. This device has a maximum propagation delay time of 30 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
上升/下降时间 22ns, 15ns
输出接口数 1
上升时间 45 ns
输出电流Max 2 A
下降时间 40 ns
下降时间Max 25 ns
上升时间Max 35 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 35V
电源电压Max 35 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXDN609SIA IXYS Semiconductor | 当前型号 | 当前型号 |
IXDN609SIATR IXYS Semiconductor | 类似代替 | IXDN609SIA和IXDN609SIATR的区别 |
IXDN409SI IXYS Semiconductor | 类似代替 | IXDN609SIA和IXDN409SI的区别 |
IXDN509SIAT/R IXYS Semiconductor | 类似代替 | IXDN609SIA和IXDN509SIAT/R的区别 |