低边 IGBT MOSFET 灌:4A 拉:4A
Never worry about your high power transistor not turning on and off by using this power driver by Ixys Corporation. This device has a maximum propagation delay time of 40 ns. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This gate driver has a minimum operating temperature of -40 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.
上升/下降时间 9ns, 8ns
输出接口数 2
输出电流 4 A
上升时间 9 ns
下降时间 8 ns
下降时间Max 14 ns
上升时间Max 16 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 35V
电源电压Max 35 V
电源电压Min 4.5 V
安装方式 Through Hole
引脚数 8
封装 DIP-8
封装 DIP-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXDF604PI IXYS Semiconductor | 当前型号 | 当前型号 |
IXDD604PI IXYS Semiconductor | 完全替代 | IXDF604PI和IXDD604PI的区别 |
IXDI604PI IXYS Semiconductor | 完全替代 | IXDF604PI和IXDI604PI的区别 |
IXDN604PI IXYS Semiconductor | 类似代替 | IXDF604PI和IXDN604PI的区别 |