门驱动器 9-Ampere Low-Side Ultrafast MOSFET
低端 栅极驱动器 IC 非反相 8-SOIC
得捷:
IC GATE DVR 9A NON-INV 8-SOIC
立创商城:
低边 IGBT MOSFET 灌:9A 拉:9A
欧时:
IC GATE DRVR LOW-SIDE 8SOIC
贸泽:
门驱动器 9-Ampere Low-Side Ultrafast MOSFET
艾睿:
Ixys Corporation&s;s IXDD609SIATR power driver will help with fast switching within your circuit. This device has a maximum propagation delay time of 60 ns. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.
上升/下降时间 22ns, 15ns
输出接口数 1
输出电流 2 A
上升时间 22 ns
下降时间 15 ns
下降时间Max 25 ns
上升时间Max 35 ns
工作温度Max 125 ℃
工作温度Min -40 ℃
电源电压 4.5V ~ 35V
电源电压Max 35 V
电源电压Min 4.5 V
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXDD609SIATR IXYS Semiconductor | 当前型号 | 当前型号 |
IXDD609SIA IXYS Semiconductor | 类似代替 | IXDD609SIATR和IXDD609SIA的区别 |
IXDD509SIA IXYS Semiconductor | 功能相似 | IXDD609SIATR和IXDD509SIA的区别 |
IXDD509SIAT/R IXYS Semiconductor | 功能相似 | IXDD609SIATR和IXDD509SIAT/R的区别 |