IR2233STRPBF

半桥 IGBT MOSFET 灌:250mA 拉:500mA

Summary of Features:

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Floating channel designed for bootstrap operation

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Fully operational to +1200 V

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Fully operational to +600 V IR2135 option avaialble

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Tolerant to negative transient voltage

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dV/dt immune

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Gate drive supply range from 10 V/12 V to 20 V DC and up to 25 V for transient

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Undervoltage lockout for all channels

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Over-current shut down turns off all six drivers

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Independent 3 half-bridge drivers

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Matched propagation delay for all channels

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2.5 V logic compatible

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Outputs out of phase with inputs